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Thomas Theis received the B.S. degree in physics from Rensselaer
Polytechnic Institute in 1972, and M.S. and Ph.D. degrees from Brown
University in 1974 and 1978, respectively. A portion of his Ph.D. research
was done at the Technical University of Munich, where he completed a
postdoctoral year before joining IBM Research in 1979.
Dr. Theis joined the Department of Semiconductor Science and Technology at
the IBM Watson Research Center to study electronic properties of
two-dimensional systems. He also collaborated in research on surface
enhanced Raman scattering, light emission from tunnel junctions, and
conduction in silicon dioxide. The latter work helped to lay the basis for
the present understanding of conduction in wide band-gap materials. In
1982 he became manager of a group studying growth and properties of III-V
semiconductors. He published extensively on the DX-center, a donor-related
defect which limits the digital performance of some III-V transistors. In
1989 he was named Senior Manager, Semiconductor Physics and Devices. In
1993 he was named Senior Manager, Silicon Science and Technology, where he
was responsible for exploratory materials and process integration work
bridging between Research and the IBM Microelectronics Division. While in
this position, he was the principal author of IBM's successful contract
proposal for the DARPA Low Power Electronics Program. This fifteen million
dollar, three year, industry-university-SEMATECH joint program
significantly advanced silicon-on-insulator materials, devices, and design
techniques for low-power, high-performance microelectronics. Also while in
this position, Dr. Theis organized the transfer of copper interconnection
technology from IBM Research to the IBM Microelectronics Division. The
replacement of aluminum chip wiring by copper was an industry first, the
biggest change in chip wiring technology in thirty years, and involved
close collaboration between research, product development, and
manufacturing organizations. Dr. Theis assumed his current position,
Director, Physical Sciences, in February 1998. In this position he is
responsible for IBM's world-wide investments in research in the physical
sciences. At present, approximately two thirds of this investment is in
nanoscale science and technology.
Dr. Theis is a member of the IEEE, the Materials Research Society, a Fellow
of the American Physical Society and currently serves on advisory boards
for the American Institute of Physics Corporate Associates and the National
Nanofabrication Users network, and is a Member of the Committee for the
Review of the National Nanotechnology Initiative, sponsored by the National
Research Council. He has authored or co-authored over 60 scientific and
technical publications.
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